050-5841 rev a 3-2004 maximum ratings all ratings: t c = 25c unless otherwise specified. unit volts amps volts watts w/c c amps mj unit volts amps ohms ana volts min typ max 100144 0.011 250 1000 100 24 APT10M11JVFR 100144 576 3040 450 3.6 -55 to 150 300144 50 2500 APT10M11JVFR 100v 144a 0.011 ?? ?? ? characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) on state drain current 2 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10v, 0.5 i d[cont.] ) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain current (v ds = 0.8 v dss , v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 2.5ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 static electrical characteristics symbol bv dss i d(on) r ds(on) i dss i gss v gs(th) g d s sot-227 g s s d isotop ? "ul recognized" power mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new technology minimizes the jfet effect,increases packing density and reduces the on-resistance. power mos v ? also achieves faster switching speeds through optimized gate layout. faster switching avalanche energy rated lower leakage popular sot-227 package power mos v ? caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com downloaded from: http:///
dynamic characteristics APT10M11JVFR 050-5841 rev a 3-2004 z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.30.1 0.050.01 0.0050.001 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.1 single pulse 0.02 0.05 0.2 d=0.5 0.01 source-drain diode ratings and characteristics characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d [cont.]) peak diode recovery dv / dt 5 reverse recovery time(i s = -i d [cont.], di / dt = 100a/s) reverse recovery charge(i s = -i d [cont.], di / dt = 100a/s) peak recovery current(i s = -i d [cont.], di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps symbol c iss c oss c rss q g q gs q gd t d (on) t r t d (off) t f characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 0.5 v dss i d = i d [cont.] @ 25c v gs = 15v v dd = 0.5 v dss i d = i d [cont.] @ 25c r g = 0.6 ? min typ max 8600 10380 3200 4480 1180 1770 300 450 95 145 110 165 16 32 48 96 51 75 91 8 unit pf nc ns min typ max 144576 1.3 8 t j = 25c 220 t j = 125c 420 t j = 25c 0.8 t j = 125c 3.0 t j = 25c 10 t j = 125c 18 thermal / package characteristics symbol r jc r ja v isolation torque min typ max 0.28 40 2500 13 unitc/w volts lbin characteristicjunction to case junction to ambient rms voltage (50-60 hz sinusoidal waveform from terminals to mounting base for 1 min.) maximum torque for device mounting screws and electrical terminations. 1 repetitive rating: pulse width limited by maximum junction 3 see mil-std-750 method 3471 temperature. 4 starting t j = +25c, l = 241h, r g = 25 ? , peak i l = 144a 2 pulse test: pulse width < 380 s, duty cycle < 2% 5 i s -i d [cont.], di / dt = 100a/s, v dd - v dss , t j - 150c, r g = 2.0 ? , v r = 100v. apt reserves the right to change, without notice, the specifications and information contained herein. ,, downloaded from: http:///
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 2, typical output characteristics figure 3, typical output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, typical transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 0 10 20 30 40 50 0 0.5 1.0 1.5 2.0 2.5 02468 05 0 1 0 0 1 5 0 2 0 0 2 5 0 3 0 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 i d = 0.5 i d [cont.] v gs = 10v 200160 120 8040 0 1.101.05 1.00 0.95 0.90 0.85 0.80 1.15 1.10 1.05 1.00 0.95 0.90 1.21.1 1.0 0.9 0.8 0.7 0.6 200160 120 8040 0 200160 120 8040 0 150120 9060 30 0 2.001.75 1.50 1.25 1.00 0.75 0.50 050-5841 rev a 3-2004 v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle v gs =7v, 10v & 15v 6v v gs =10 & 15v v gs =10v v gs =20v t j = +25c t j = -55c t j = +125c t j = +125c t j = +25c t j = -55c 7v 5.5v 4.5v 5v 4v 6v 5.5v 4.5v 5v 4v normalized to v gs = 10v @ 0.5 i d [cont.] APT10M11JVFR downloaded from: http:///
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, typical capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, typical source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) APT10M11JVFR t c =+25c t j =+150c single pulse 600100 5010 51 2016 12 84 0 050-5841 rev a 3-2004 operation here limited by r ds (on) 1 5 10 50 100 .01 .1 1 10 50 0 100 200 300 400 500 0 0.4 0.8 1.2 1.6 2.0 30,00010,000 5,0001,000 500400 100 5010 51 v ds =50v v ds =20v v ds =80v i d = 50a 100s10ms 100ms dc 1ms t j =+150c t j =+25c c rss c oss c iss c oss c iss apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. isotop ? is a registered trademark of sgs thomson. sot-227 (isotop ? ) package outline 31.5 (1.240)31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307)8.2 (.322) 30.1 (1.185)30.3 (1.193) 38.0 (1.496)38.2 (1.504) 14.9 (.587)15.1 (.594) 11.8 (.463)12.2 (.480) 8.9 (.350)9.6 (.378) hex nut m4 (4 places) 0.75 (.030)0.85 (.033) 12.6 (.496)12.8 (.504) 25.2 (0.992)25.4 (1.000) 1.95 (.077)2.14 (.084) * source drain gate * r = 4.0 (.157) (2 places) 4.0 (.157)4.2 (.165) (2 places) w=4.1 (.161)w=4.3 (.169) h=4.8 (.187)h=4.9 (.193) (4 places) 3.3 (.129)3.6 (.143) * source source terminals are shortedinternally. current handling capability is equal for either source terminal. downloaded from: http:///
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